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Characteristics of HfO 2 / HfSi x O y film as an alternative gate diel…
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- 등록일 25-05-20
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Characteristics of HfO 2 / HfSi x O y film as an alternative gate dielectric in
metal–oxide–semiconductor devices
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- Effects of annealing on the properties of Cu y low k polymer y Si structures prepared by plasma polymerization of decahydronaphthalene and tetraethylorthosilicate and Cu sputtering
- Effects of postdeposition in situ heat treatment on the properties of low dielectric constant plasma polymer films deposited using decahydronaphthalene and tetraethyl orthosilicate as the precursors